4. detail go to our website at www.twtysemi.com DMN2004K characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v drain current (note 1) steady state t a = 25 c t a = 85 c i d 540 390 ma pulsed drain current (note 3) i dm 1.5 a total power dissipation (note 1) p d 350 mw thermal resistance, junction to ambient r ja 357 c/w operating and storage temperature range t j ,t stg -65 to +150 c note: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. mechanical data a e j l top view m b c h g d k d g s source e q uivalent circuit gate protection diode gate d ra i n advanced information case: sot-23 case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram weight: 0.008 grams (approximate) low on-resistance: r ds(on) low gate threshold voltage low input capacitance fast switching speed low input/output leakage lead free by design/rohs compliant (note 2) esd protected up to 2kv "green" device (note 4) qualified to aec-q101 standards for high reliability features maximum ratings @ t a = 25c unless otherwise specified sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm new product esd protected up to 2kv smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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